Sulfurization of SiO2surface for polycrystalline silicon growth on SiO2/Si structure at 250 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110958
Reference13 articles.
1. Crystallization of LPCVD Silicon Films by Low Temperature Annealing
2. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
3. Electrical Characteristics of High-Mobility Fine-Grain Poly-Si TFTs from Laser Irradiated Sputter-Deposited Si Film
4. Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFTs
5. High-mobility poly-Si TFT's fabricated by a novel excimer laser crystallization method
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