Mode of growth and microstructure of polycrystalline silicon obtained by solid‐phase crystallization of an amorphous silicon film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356014
Reference32 articles.
1. Characterisation of low temperature poly-Si thin film transistors
2. TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
3. The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films
4. Crystal forms by solid‐state recrystallization of amorphous Si films on SiO2
5. Electrical Characteristics of High-Mobility Fine-Grain Poly-Si TFTs from Laser Irradiated Sputter-Deposited Si Film
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