The advantages of normal incidence ultra-low energy secondary ion mass spectrometry depth profiling-Reference-Cited by-同舟云学术

The advantages of normal incidence ultra-low energy secondary ion mass spectrometry depth profiling

Published:1999-04 Issue: Volume:144-145 Page:292-296
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ormsby T.J,Chu D.P,Dowsett M.G,Cooke G.A,Patel S.B

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: pursuing the physics to interpret the data

2. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

3. M.G. Dowsett, D.P. Chu, The 11th Annual SIMS Workshop on Secondary Ion Mass Spectrometry, Austin, TX, May 1998.

4. M.G. Dowsett, N.S. Smith, R. Bridgeland, D. Richards, A.C. Lovejoy, P. Pedrick, in: A. Benninghoven et al. (Eds.), Secondary Ion Mass Spectrometry SIMS X, Wiley, Chichester, 1997, p. 367.

5. K. Iltgen, A. Benninghoven, E. Niehuis, in: G. Gillen et al. (Eds.), Secondary Ion Mass Spectrometry SIMS XI, Wiley, Chichester, 1998, p. 367.

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