High-resolution secondary ion mass spectrometry depth profiling of nanolayers-Reference-Cited by-同舟云学术

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High-resolution secondary ion mass spectrometry depth profiling of nanolayers

Published:2012-08-18 Issue:19 Volume:26 Page:2224-2230
ISSN:0951-4198
Container-title:Rapid Communications in Mass Spectrometry
language:en
Short-container-title:Rapid Commun. Mass Spectrom.

Author:

Baryshev Sergey V.¹,Zinovev Alexander V.¹,Tripa C. Emil¹,Pellin Michael J.²,Peng Qing³,Elam Jeffrey W.³,Veryovkin Igor V.¹

Affiliation:

1. Materials Science Division, Argonne National Laboratory; 9700 S. Cass Ave. Argonne IL 60439 USA

2. Physical Sciences and Engineering Directorate, Argonne National Laboratory; 9700 S. Cass Ave. Argonne IL 60439 USA

3. Energy Systems Division, Argonne National Laboratory; 9700 S. Cass Ave. Argonne IL 60439 USA

Publisher

Wiley

Subject

Organic Chemistry,Spectroscopy,Analytical Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/rcm.6344/fullpdf

Reference45 articles.

1. Bridging the cluster-to-bulk divide: electron attachment time-of-flight mass spectrometry reveals geometrical shell closings in (SF6)n clusters (n = 2-550);Ingolfsson;Phys. Rev. Lett.,2001

2. Ion yields and erosion rates for Si1−x Gex (0 < = x < = 1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25-1 keV;Morris;J. Appl. Phys.,2009

3. Particle emission from chemically enhanced electron-beam-induced etching of Si: An approach for zero-energy secondary-ion mass spectrometry;Vanhove;Phys. Rev. B,2009

4. Quantitative characterization of solid state phases by secondary neutral mass spectrometry;Oechsner;J. Appl. Phys.,2009

5. Nanoscale investigations of shift of individual interfaces in temperature induced processes of Ni-Si system by secondary neutral mass spectrometry;Lakatos;Appl. Phys. Lett.,2010

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1. Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region;Scientific Reports;2022-07-08

2. Quantification of Ag/Ni Auger electron spectroscopy depth profiles upon preferential sputtering with non-stationary roughness;Thin Solid Films;2022-05

3. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering;Journal of Vacuum Science & Technology B;2021-12

4. ToF-SIMS Investigation of the Initial Stages of MeCpPt(CH3)3 Adsorption and Decomposition on Nickel Oxide Surfaces: Exploring the Role and Location of the Ligands;Organometallics;2020-02-03

5. Application of time-of-flight secondary ion mass spectrometry to the detection of surface intermediates during the first cycle of atomic layer deposition (ALD) of platinum on silica surfaces;Applied Surface Science;2019-09

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