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Low frequency noise measurements on TiN/n-Si Schottky diodes

  • Published:1999-04 Issue:1-4 Volume:142 Page:390-393
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Lee J.I.,Brini J.,Kamarinos G.,Dimitriadis C.A.,Logothetidis S.,Patsalas P.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes;Applied Physics Letters;2015-08-31

2. High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment;Journal of Applied Physics;2013-10-14

3. Low Frequency Noise Characteristics on Al/Nb2O5/p-type Schottky Diode Fabricated by Pulsed DC Magnetron Sputtering;Molecular Crystals and Liquid Crystals;2013-01

4. Schottky barrier height of TiN∕p-type Si(100) evaluated by forward current–voltage and capacitance;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005

5. Evaluation of Schottky barrier height of TiN∕p-type Si(100);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-09
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