Schottky barrier height of TiN∕p-type Si(100) evaluated by forward current–voltage and capacitance
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Published:2005
Issue:1
Volume:23
Page:178
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Pelleg Joshua,Douhin A.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
4 articles.
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