Oxide formation and passivation for micro- and nano-electronic devices
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference7 articles.
1. Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process
2. Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processing
3. Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectrics
4. Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfaces
5. Charge redistribution at GaNGa2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces
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1. Ion energy control in an industrial ICP etch chamber without bias power usage;Journal of Vacuum Science & Technology B;2022-01
2. Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices;Surface Science;2004-09
3. Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices;Microelectronic Engineering;2004-04
4. Microscopic bonding and macroscopic strain relaxations at Si-SiO 2 interfaces;Applied Physics A: Materials Science & Processing;2004-03-01
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