Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE-Reference-Cited by-同舟云学术

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Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

Published:2003-06 Issue:1-4 Volume:216 Page:585-589
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tsuda Michinobu,Watanabe Kenichi,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu,Liu Rong,Bell Abigail,A. Ponce Fernando

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

3. Shortest wavelength semiconductor laser diode

4. S. Nakamura, G. Fosal, The Blue Laser Diodes, Springer, Berlin, 1997.

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1. Large-area single-crystal TMD growth modulated by sapphire substrates;Nanoscale;2024

2. Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire;Nature Nanotechnology;2023-07-27

3. MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity;Crystals;2023-03-04

4. Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium;AIP Advances;2022-01-01

5. Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces;Nanotechnology;2019-09-04

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