Contact resistivity between tungsten and impurity (P and B)-doped Si1−−Ge C epitaxial layer-Reference-Cited by-同舟云学术

Contact resistivity between tungsten and impurity (P and B)-doped Si1−−Ge C epitaxial layer

Published:2003-05 Issue: Volume:212-213 Page:679-683
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Noh Jintae,Sakuraba Masao,Murota Junichi,Zaima Shigeaki,Yasuda Yukio

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. J. Murota, M. Ishii, K. Goto, M. Sakuraba, T. Matsuura, Y. Kudoh, M. Koyanagi, in: Proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22–24 September 1997, p. 376.

2. Optical band gap of the ternary semiconductor Si1−x−yGexCy

3. SiGeC: Band gaps, band offsets, optical properties, and potential applications

4. Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements

5. Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices

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