1. Y. Ma, Y. Ono, L. Stecker, D.R. Evans, S.T. Hsu, Zirconium oxide based gate dielectrics with equivalent oxide thickness of less than 1.0 nm and performance of submicron MOSFET using a nitride gate replacement process, Tech. Dig. IEDM (1999) 149–152.
2. B.H. Lee, L. Kang, W.J. Qi, R. Nieh, Y. Jeon, K. Ohnishi, J.C. Lee, Ultra thin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application, Tech. Dig. IEDM (1999) 133–136.
3. L. Manchanda, M.L. Green, R.B. van Dover, M.D. Morris, A. Kerber, Y. Hu, J.-P. Han, P.J. Silverman, T.W. Sorsch, G. Weber, V. Donnelly, K. Pelhos, F. Klemens, N.A. Ciampa, A. Kornblit, Y.O. Kim, J.E. Bower, D. Barr, E. Ferry, D. Jacobson, J. Eng, B. Busch, H. Schulte, Si-doped aluminates for high temperature metal-gate CMOS: Zr–Al–Si–O, a novel gate dielectric for low power applications, Tech. Dig. IEDM (2000) 23–26.
4. W.-J. Qi, R. Nieh, B.H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, J.C. Lee, MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si, Tech. Dig. IEDM (1999) 145–148.
5. H. Shimada, I. Ohshima, S. Nakao, M. Nakagawa, K. Kanemoto, M. Hirayama, S. Sugawa, T. Ohmi, Low resisitivity bcc-Ta/TaNx metal gate MNSFETs having plane gate structure featuring fully low-temperature processing below 450 °C, Dig. Tech. Papers Symp. VLSI Technol. (2001) 67–68.