Low resistivity bcc-Ta/TaN/sub x/ metal gate MNSFETs having plane gate structure featuring fully low-temperature processing below 450°C-Reference-Cited by-同舟云学术

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Low resistivity bcc-Ta/TaN/sub x/ metal gate MNSFETs having plane gate structure featuring fully low-temperature processing below 450°C

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Container-title:2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)
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Author:

Shimada H.,Ohshima I.,Nakao S.-I.,Nakagawa M.,Kanemoto K.,Hirayama M.,Sugawa S.,Ohmi T.

Publisher

Japan Soc. Appl. Phys

Link

http://xplorestaging.ieee.org/ielx5/7441/20225/00934950.pdf?arnumber=934950

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology;Progress in Materials Science;2011-07

2. Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals;Journal of Applied Physics;2008-12

3. Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors;Journal of Alloys and Compounds;2008-09

4. Evaluation of Si3N4/Si interface by UV Raman spectroscopy;Applied Surface Science;2008-07

5. Electric Characteristics of Si3N4Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces;Japanese Journal of Applied Physics;2007-04-24

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