Optical and electrical properties of GaN/AlN superlattices grown on Si(1 1 1) substrate by pulsed laser deposition-Reference-Cited by-同舟云学术

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Optical and electrical properties of GaN/AlN superlattices grown on Si(1 1 1) substrate by pulsed laser deposition

Published:2003-07 Issue:1-4 Volume:217 Page:28-33
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tong X.L,Zheng Q.G,Qin Y.X,Yu B.H,Xi Z.J,Ding Z.H

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Growth of epitaxial GaN films by pulsed laser deposition

2. Epitaxial growth of GaN thin film on sapphire with a thin ZnO buffer layer by liquid target pulsed laser deposition

3. Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition

4. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

5. Effects of the number of periods on strain in superlattices

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target;Revista Mexicana de Física;2019-07-01

2. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices;Surface Science Reports;2015-11

3. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition;Journal of Applied Physics;2015-05-14

4. The preparation and properties of Y2O3/AlN anti-reflection films on chemical vapor deposition diamond;Thin Solid Films;2011-11

5. Effects of annealing temperature on amorphous GaN films formed on Si(1 1 1) by pulsed laser deposition;Semiconductor Science and Technology;2009-07-24

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