Estimation of ultra-shallow implants using SIMS, NRA and chemical analysis-Reference-Cited by-同舟云学术

Estimation of ultra-shallow implants using SIMS, NRA and chemical analysis

Published:2003-01 Issue: Volume:203-204 Page:377-382
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tomita M,Suzuki M,Tachibe T,Kozuka S,Murakoshi A

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Depth scale distortions in shallow implant secondary ion mass spectrometry profiles

2. M.G. Dowsett, J. Bellingham, S. Al-Harti, B. Guzman, T.J. Ormsby, G.A. Cooke, C. McConville, in: Proceedings of the Second International Symposium on SIMS and Related Techniques, Seikei University, Japan, 2000.

3. M. Tomita, C. Hongo, A. Murakoshi, in: Proceedings of the Secondary Ion Mass Spectrometry SIMS XII, Elsevier, Amsterdam, 2000, p. 489.

4. J. Bennett, A. Diebold, in: Proceedings of the Secondary Ion Mass Spectrometry SIMS XII, Elsevier, Amsterdam, 2000, p. 541.

5. Sputtering rate change and surface roughening during oblique and normal incidence O[sub 2][sup +] bombardment of silicon, with and without oxygen flooding

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