Sputtering rate change and surface roughening during oblique and normal incidence O[sub 2][sup +] bombardment of silicon, with and without oxygen flooding-Reference-Cited by-同舟云学术

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Sputtering rate change and surface roughening during oblique and normal incidence O[sub 2][sup +] bombardment of silicon, with and without oxygen flooding

Published:1998-11 Issue:6 Volume:16 Page:3099
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Magee Charles W.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detailed analysis of the silicon surface under low-energy oxygen bombardment at atomic resolution;Physical Review B;2012-08-21

2. Matrix effect-free depth profiling of implanted Mg in Al x Ga1-x As/GaAs multi-layers by resonance enhanced multiphoton laser post-ionization sputtered neutral mass spectrometry;Surface and Interface Analysis;2012-02-24

3. Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator;Journal of Applied Physics;2010-04

4. Silicon isotope superlattices: Ideal SIMS standards for shallow junction characterization;Applied Surface Science;2008-12

5. Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films;Surface and Interface Analysis;2008-10

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