Porous silicon layers as a model system for nanostructures-Reference-Cited by-同舟云学术

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Porous silicon layers as a model system for nanostructures

Published:1996-09 Issue: Volume:104-105 Page:552-556
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Rossow U.,Frotscher U.,Pietryga C.,Aspnes D.E.,Richter W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Structural and elastic properties of porous silicon

2. Precision Bounds to Ellipsometer Systems

3. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

4. Characterisation of porous silicon layers by spectroscopic ellipsometry

5. Study of the optical transitions in poly- and micro-crystalline Si by spectroscopic ellipsometry

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ellipsometric characterization of SiOx films with embedded Si nanoparticles;Vacuum;2009-08

2. Effect of Si nanoparticles embedded in SiOx on optical properties of the films studied by spectroscopic ellipsometry and photoluminescence spectroscopy;Optical Materials;2008-03

3. Si nanocrystal-containing SiOx (x<2) produced by thermal annealing of PECVD realized thin films;Materials Science and Engineering: B;2005-12

4. Optical properties of Si nanocrystals embedded inSiO2;Physical Review B;2005-10-21

5. Dielectric function of Si nanocrystals embedded in SiO2;Thin Solid Films;2004-05

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