Surface dielectric change of GaAs determined from surface photo-absorption spectra
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference23 articles.
1. New developments in spectroellipsometry: the challenge of surfaces
2. In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption
3. Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
4. Structural transformation of As-stabilized surfaces caused by Ga-deposition detected by time-resolved surface photo-absorption
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1. Ellipsometric detection of transitional surface structures on decapped GaAs;Surface Science;2005-08
2. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques;Journal of Crystal Growth;1998-12
3. Monitoring the deposition of an interference film by differential reflection of light;Technical Physics Letters;1998-10
4. Dielectric changes of GaAs surfaces determined using the Kramers-Kronig analysis of surface photoabsorption spectra;Thin Solid Films;1998-02
5. Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry;Thin Solid Films;1998-02
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