Structural transformation of As-stabilized surfaces caused by Ga-deposition detected by time-resolved surface photo-absorption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Migration-Enhanced Epitaxy of GaAs and AlGaAs
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ellipsometric detection of transitional surface structures on decapped GaAs;Surface Science;2005-08
2. Origin of surface reflectance spectrum during epitaxy;Journal of Crystal Growth;1997-04
3. Surface Termination Effect on Reflectance Spectra of GaAs;Physical Review Letters;1997-02-03
4. Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption;Journal of Crystal Growth;1997-01
5. Surface dielectric change of GaAs determined from surface photo-absorption spectra;Applied Surface Science;1996-11
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