Analysis of the sidewall films formed during Si trench etching with photoresist mask in Cl2/HBr-based plasma-Reference-Cited by-同舟云学术

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Analysis of the sidewall films formed during Si trench etching with photoresist mask in Cl2/HBr-based plasma

Published:2000-09 Issue:1 Volume:165 Page:1-8
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee Sang-Do,Nam So-Young,Ha Jae-Hee,Park Jin-Won

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl2/O2 high density plasmas

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask;ECS Journal of Solid State Science and Technology;2023-06-01

2. Comparison of He∕O[sub 2] and Ar∕O[sub 2] Atmospheric-Pressure Plasma for Photoresist Etching;Journal of The Electrochemical Society;2007

3. Photoresist etching using Ar/O2 and He/O2 atmospheric pressure plasma;Thin Solid Films;2006-12

4. Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique;Solid-State Electronics;2002-06

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