Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates-Reference-Cited by-同舟云学术

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Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

Published:2000-10 Issue:3-4 Volume:167 Page:191-196
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Li Y.F.,Ye X.L.,Liu F.Q.,Xu B.,Ding D.,Jiang W.H.,Sun Z.Z.,Liu H.Y.,Zhang Y.C.,Wang Z.G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

2. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

3. On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands

4. Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots

5. InAs/GaAs quantum dots radiative recombination from zero-dimensional states

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011

2. Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001);Journal of Crystal Growth;2005-01

3. Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures;Journal of Crystal Growth;2004-10

4. 6×6effective mass Hamiltonian for heterostructures grown on (11N)-oriented substrates;Physical Review B;2003-08-27

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