Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
2. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
3. Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
4. Surface morphology control of InAs nanostructures grown on InGaAs/InP
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical properties of self-assembled InAs/InAlAs quantum dots on InP;Semiconductor Science and Technology;2010-05-18
2. Surface Structure Dependent Growth of InAs/InAlAs Quantum Wires on InP(100).;Advanced Materials Research;2007-11
3. Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited;Journal of Crystal Growth;2006-08
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