Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
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5. Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy
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