Investigation on the Mocvd-Growth and Optical Properties of Ingan/Gan Quantum Wells by Modulating Nh3 Flux-Reference-Cited by-同舟云学术

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Investigation on the Mocvd-Growth and Optical Properties of Ingan/Gan Quantum Wells by Modulating Nh3 Flux

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Chen Zhenyu,Wang Xiao-wei,Liang Feng,Zhao Degang,Chen Ping,Liu Zongshun,Jiang De-sheng,Yang Jing

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference30 articles.

1. Gallium Indium Nitride-Based Green Lasers;D Sizov;Journal of Lightwave Technology,2012

2. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature;F Liang;Journal of Semiconductors,2021

3. 9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode;J Yang;Journal of Semiconductors,2022

4. Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN;T Zhi;Journal of Semiconductors,2021

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