Structural properties of poly-Si deposited by rf glow discharge using 100% SiH4-Reference-Cited by-同舟云学术

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Structural properties of poly-Si deposited by rf glow discharge using 100% SiH4

Published:1997-04 Issue: Volume:113-114 Page:462-466
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jayatissa Ahalapitiya Hewage,Yamaguchi Tomuo,Nakanishi Yoichiro,Ishikawa Kenji,Hatanaka Yoshinori

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma

2. Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C

3. A real time study of the growth of microcrystalline silicon on transparent conducting oxide substrates

4. Very low temperature polycrystalline silicon films with very large grains deposited for thin film transistor applications

5. Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Remote Plasma Enhanced Chemical Vapor Deposition of TiOx Films from Titanium Tetraisopropoxide;MRS Proceedings;2001

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