Influence of laser fluence in ArF-excimer laser assisted crystallisation of a-SiGe:H films-Reference-Cited by-同舟云学术

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Influence of laser fluence in ArF-excimer laser assisted crystallisation of a-SiGe:H films

Published:2003-03 Issue: Volume:208-209 Page:358-363
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chiussi S.,López E.,Serra J.,González P.,Serra C.,León B.,Fabbri F.,Fornarini L.,Martelli S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. IR bolometers made of polycrystalline silicon germanium

2. Characterization of bolometers based on polycrystalline silicon germanium alloys

3. Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications

4. Low-temperature solid-phase crystallization of a-Si1−xGex on SiO2 by ion-beam stimulation

5. Laser-assisted deposition of thin films from gas-phase and surface-adsorbed molecules

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1. Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films;ACS Applied Materials & Interfaces;2020-02-03

2. Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers;ECS Journal of Solid State Science and Technology;2019

3. Low energy shifted photoluminescence of Er3+ incorporated in amorphous hydrogenated silicon–germanium alloys;Journal of Non-Crystalline Solids;2009-06

4. Numerical simulation of the UV-excimer laser assisted modification of amorphous hydrogenated Si/Ge bilayers to graded epitaxial heterostructures;Thin Solid Films;2008-11

5. A growth rate, structure and surface morphology study of Si1-x-yGexCy films deposited by ArF-LCVD in tilted geometry;Vacuum;2008-08

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