A growth rate, structure and surface morphology study of Si1-x-yGexCy films deposited by ArF-LCVD in tilted geometry
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference21 articles.
1. Amorphous and microcristalline semiconductor devices: Optoelectronic devices;Kanicki,1991
2. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
3. Optical band gap of the ternary semiconductor Si1−x−yGexCy
4. ArF-excimer laser induced chemical vapour deposition of amorphous hydrogenated SiGeC films
5. Amorphous germanium layers prepared by UV-photo-induced chemical vapour deposition
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Thermal Failure of Multilayer SiGe/Si;Tribology Letters;2013-10-09
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