Structure and luminescence of GaN layers-Reference-Cited by-同舟云学术

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Structure and luminescence of GaN layers

Published:2001-07 Issue:1-4 Volume:179 Page:191-195
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Barfels T,Fitting H.-J,Jansons J,Tale I,Veispals A,von Czarnowski A,Wulff H

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Infrared lattice vibrations of GaN

3. Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy

4. Far-infrared and Raman analysis of phonons and phonon interface modes in GaN epilayers on GaAs and GaP substrates

5. Luminescence in epitaxial GaN : Cd

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of GaN thin film on silicon substrate by gallium oxide ammoniation;Optik;2018-10

2. Correlation between structural and optical properties of GaN epi-layers by the cathodoluminescence technique;The European Physical Journal Plus;2016-06

3. A development of the LED TMGa precursor reuse technology;Materials Letters;2013-02

4. Synthesis of hexagonal and cubic GaN thin film on Si (111) using a low-cost electrochemical deposition technique;Materials Letters;2010-07

5. Luminescent properties of GaN films grown on porous silicon substrate;Journal of Luminescence;2010-03

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