Nanosized β-SiC films prepared by a Cat-CVD with negative bias at low substrate temperature-Reference-Cited by-同舟云学术

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Nanosized β-SiC films prepared by a Cat-CVD with negative bias at low substrate temperature

Published:2003-07 Issue:1-4 Volume:217 Page:314-318
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wang B,Zhao Q,Li J.C,Wang B.B,Song X.M,Yang X.D,Yan H,Wang M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten

2. Thermal Stability of Blue Emission from Porous β-SiC Formed on Crystalline Si by C+ Implantation

3. Fabrication of Nanoscale Cubic SiC Particle Film

4. Low temperature direct growth of nanocrystalline silicon carbide films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of silicon carbide dispersion on the microwave absorbing properties of silicon carbide-epoxy composites in 2–40 GHz;Journal of Polymer Research;2016-03-31

2. Sputter Deposition of Nanocrystalline β-SiC Films and Molecular Dynamics Simulations of the Sputter Process;Journal of Nanoscience and Nanotechnology;2010-02-01

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