Low temperature direct growth of nanocrystalline silicon carbide films-Reference-Cited by-同舟云学术

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Low temperature direct growth of nanocrystalline silicon carbide films

Published:2000-01 Issue: Volume:69-70 Page:530-535
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kerdiles S,Rizk R,Gourbilleau F,Pérez-Rodrı́guez A,Garrido B,González-Varona O,Morante J.R

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Effects of abrupt and gradeda‐Si:C:H/a‐Si:H interface on internal properties and external characteristics ofp‐i‐na‐Si:H solar cells

2. Solar-blind UV photodetectors for large area applications

3. Analysis of conduction mechanisms in annealed n-Si1−xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations

4. Genuine wide-bandgap microcrystalline emitter Si-HBT with enhanced current gain by suppressing homocrystallization

5. Microcrystalline SiC Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at Low Temperatures

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1. Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface;Semiconductor Science and Technology;2018-07-11

2. SiC Nanostructured Films;Engineering Materials and Processes;2014

3. Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases;Journal of Materials Science: Materials in Electronics;2012-10-18

4. Decay processes of photoluminescence in a nanocrystalline SiC thin film;Applied Surface Science;2011-12

5. PREPARATION OF NANOCRYSTALLINE SILICON CARBIDE FILMS WITH HIGH SEEBECK COEFFICIENT AND LOW RESISTIVITY;Nano;2011-04

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