Author:
Hongo C,Tomita M,Suzuki M
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference7 articles.
1. A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+
2. Basic requirements for quantitative SIMS analysis using cesium bombardment and detection of MCs+ secondary ions
3. QUANTITATIVE ANALYSIS OF GaAlAs COMPOSITION AND ITS DOPANT CONCENTRATION BY Cs CLUSTER ION MASS SPECTROMETRY
4. High-Precision Characterization of III-Nitride Semiconductor Alloys with Secondary Ion Mass Spectrometry (SIMS)
5. Y. Gao, Y. Marie, F. Saldi, H.N. Migeon, in: A. Benninghoven, Y. Nihei, R. Shimizu, H.W. Werner (Eds.), SIMS IX, Wiley, Chichester, 1994, p. 406.
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献