Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution-Reference-Cited by-同舟云学术

Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution

Published:1999-04 Issue:1-4 Volume:142 Page:316-321
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hsiao H.L,Hwang H.L,Yang A.B,Chen L.W,Yew T.R

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. K.C. Wang, Studies on hydrogenated polycrystalline silicon thin films deposited by ECR-CVD and PECVD, PhD Thesis, Dept. of Electrical Engineering, Natl. Tsing-Hua Univ., 1995.

2. Control of silicon network structure in plasma deposition

3. Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma Deposition

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