Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100) surfaces
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference18 articles.
1. Correlation of surface morphology with chemical structures of sulfur‐passivated GaAs(100) investigated by scanning tunneling microscopy and x‐ray photoelectron spectroscopy
2. Ambient scanning tunneling microscopy and atomic force microscopy on GaAs (110) treated with (NH4)2Sx and SeS2 solutions
3. Kinetics of Oxidation on Differently Treated GaAs (100) Surfaces Studied by XPS and STM
4. P2S5passivation of GaAs surfaces for scanning tunneling microscopy in air
5. Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in air
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1. Theoretical analysis of the bias-voltage dependence of the apparent barrier height;Physical Review B;2004-10-14
2. Wet chemical cleaning of InP surfaces investigated byin situandex situinfrared spectroscopy;Journal of Applied Physics;2003-08-15
3. Core and valence-level photoemission study of theInP(001)−(2×1)Ssurface: Surface structure and electronic states;Physical Review B;2000-04-15
4. Down-Sizing in Analytical Chemistry. Evaluation of the barrier heights of graphite, Au, and Pt surfaces by measuring the tunnel-gap-width dependence of the tunnel current.;BUNSEKI KAGAKU;2000
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