Core and valence-level photoemission study of theInP(001)−(2×1)Ssurface: Surface structure and electronic states
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.9997/fulltext
Reference25 articles.
1. (NH4)2Sx-treated InP(100) surfaces studied by soft x-ray photoelectron spectroscopy
2. Passivation of the InP surface using polysulfide and silicon nitride overlayer
3. Chemical stability of (NH 4 ) 2 S-passivated InP(001) surfaces investigations by XPS and XPD
4. Chemical, structural, and electronic properties of sulfur‐passivated InP(001) (2×1) surfaces treated with (NH4)2Sx
5. Photoelectron diffraction studies on the structure of sulfur-passivated InP(100) and CaF2 layers grown on S/InP(100)
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1. Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal;Chinese Journal of Chemical Physics;2014-02-27
2. Structural and electronic properties of 0.5 ML sulfur adsorbed on the GaP(001) surface;Journal of Materials Science;2010-10-20
3. Internal Structure of InP/ZnS Nanocrystals Unraveled by High-Resolution Soft X-ray Photoelectron Spectroscopy;ACS Nano;2010-07-28
4. Surface Structure and Electronic Property of InP(001)-(2 × 1)S Surface: A First-Principles Study;Chinese Physics Letters;2010-04
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