Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. Prospects for device implementation of wide band gap semiconductors
3. GaN Growth Using GaN Buffer Layer
4. Novel metalorganic chemical vapor deposition system for GaN growth
5. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
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