The microstructure of gallium nitride monocrystals grown at high pressure-Reference-Cited by-同舟云学术

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The microstructure of gallium nitride monocrystals grown at high pressure

Published:1996-11 Issue:2 Volume:169 Page:235-242
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Leszczynski M.,Grzegory I.,Teisseyre H.,Suski T.,Bockowski M.,Jun J.,Baranowski J.M.,Porowski S.,Domagala J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients

3. Crystal growth of GaN by the reaction between gallium and ammonia

4. High pressure solution growth of GaN

5. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

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3. Schottky junction properties of graphene with nitrogen and gallium polar freestanding GaN;2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO);2019-07

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