Analytical model of silicon carbide growth under free-molecular transport conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Molecular and ion beam epitaxy of 3C‐SiC
2. Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum
3. Yu.A. Vodakov and E.N. Mokhov, Patent GB No. 1458445 (1974).
4. Thermodynamic analysis of molecular beam epitaxy of III–V compounds; Application to the GayIn1−yAs multilayer epitaxy
5. Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Carbide
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