Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers-Reference-Cited by-同舟云学术

Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers

Published:1997-01 Issue:1-4 Volume:170 Page:639-644
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Silvestre L.,Ougazzaden A.,Delprat D.,Ramdane A.,Daguet C.,Patriarche G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. Control of selective area growth of InP

2. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE

3. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures

4. High speed and high density wavelength multichannel butt-jointed DBR lasers

5. Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxy

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