New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE-Reference-Cited by-同舟云学术

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New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE

Published:2008-02 Issue:2-3 Volume:147 Page:114-117
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Martin J.,Martinez A.,Goh W.H.,Gautier S.,Dupuis N.,Le Gratiet L.,Decobert J.,Ramdane A.,Maloufi N.,Ougazzaden A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature

2. Insituburied GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy

3. Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

4. Fabrication of GaN photonic crystals for 400 nm wavelength

5. Very uniform epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A systematic study of Ga- and N-polar GaN nanowire–shell growth by metal organic vapor phase epitaxy;CrystEngComm;2020

2. Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates;CrystEngComm;2019

3. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask;Applied Physics Letters;2016-03-07

4. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates;Nanotechnology;2016-02-15

5. Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth;CrystEngComm;2012

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