Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask-Reference-Cited by-同舟云学术

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Published:2016-03-07 Issue:10 Volume:108 Page:103105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Puybaret Renaud¹²,Patriarche Gilles³,Jordan Matthew B.¹²,Sundaram Suresh²^ORCID,El Gmili Youssef²,Salvestrini Jean-Paul⁴^ORCID,Voss Paul L.¹²,de Heer Walt A.⁵,Berger Claire⁵⁶,Ougazzaden Abdallah¹²

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

2. CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz, France

3. CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France

4. Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz, France

5. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

6. CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9, France

Funder

Graphene Flagship EU grant

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

Agence Nationale de la Recherche (ANR)

Centre National de la Recherche Scientifique (CNRS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/apl/108/10/1.4943205.pdf?itemId=/content/aip/journal/apl/108/10/10.1063/1.4943205&mimeType=pdf&containerItemId=content/aip/journal/apl

Reference39 articles.

1. Substrate-induced band gap in graphene on hexagonal boron nitride:Ab initiodensity functional calculations

2. Boron nitride substrates for high-quality graphene electronics

3. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

4. Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

5. Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes

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