Epitaxial growth of InGaAs on misoriented GaAs(100) substrate by metal-organic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers
2. Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy
3. Evolution of the surface cross‐hatch pattern in InxGa1−xAs/GaAs layers grown by metal‐organic chemical vapor deposition
4. Relaxed InxGa1−xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs
5. Structural Investigation of Metalorganic Chemical-Vapor-Deposition-Grown InGaAs Layers on Misoriented GaAs Substrates
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