Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth-Reference-Cited by-同舟云学术

Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth

Published:2002-04 Issue: Volume:237-239 Page:1757-1761
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Evstratov I.Yu.,Kalaev V.V.,Zhmakin A.I.,Makarov Yu.N.,Abramov A.G.,Ivanov N.G.,Korsakov A.B.,Smirnov E.M.,Dornberger E.,Virbulis J.,Tomzig E.,von Ammon W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

2. Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

3. W. Cabot, P. Moin, Flow, Turbulence and Combustion 63 (2000) 1–4, 269.

4. Strategies for turbulence modelling and simulations

5. Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

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