Effects of Transverse Magnetic Field on Thermal Fluctuations in the Melt of a Cz-Si Crystal Growth
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Published:2011-03-21
Issue:1
Volume:34
Page:1123-1128
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Liu Xin,Liu Lijun,Wang Yuan
Abstract
Three dimensional (3D) unsteady computations were carried out to understand the effects of transverse magnetic field (TMF) on thermal fluctuations in the melt of a 300 mm Cz-Si crystal growth. A developed LES program with the dynamic SGS model was employed to predict the melt turbulence with or without TMF. The effects of TMF on statistical behaviors of the melt convection were studied. It was found that the thermal fluctuations in the crystallization zone decreased significantly when the TMF was applied. This indicates that the TMF can suppress the flow instability in the melt of the Cz-Si crystal growth.
Publisher
The Electrochemical Society
Cited by
1 articles.
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