Drop experiments on crystallization of InGaSb semiconductor-Reference-Cited by-同舟云学术

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Drop experiments on crystallization of InGaSb semiconductor

Published:2002-04 Issue: Volume:237-239 Page:1831-1834
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hayakawa Y.,Balakrishnan K.,Komatsu H.,Murakami N.,Nakamura T.,Koyama T.,Ozawa T.,Okano Y.,Miyazawa M.,Dost S.,Dao Le H.,Kumagawa M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. A comparative study of crystal growth phenomena under reduced and enhanced gravity

2. Melt growth of striation and etch pit free GaSb under microgravity

3. Floating-zone growth of surface-coated silicon under microgravity

4. Growth kinetics in space- and earth-grown InP and GaSb crystals

5. Crystal Growth and Segregation under Zero Gravity: Ge

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors - Experiments at the International Space Station and on Earth-;INT J MICROGRAVITY S;2017

2. Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station;npj Microgravity;2016-07-21

3. A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10;Microgravity Science and Technology;2016-04-21

4. Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments;npj Microgravity;2015-08-27

5. Growth of InGaSb Alloy Semiconductor Bulk Crystals under Microgravity;Hyomen Kagaku;2012

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