Composition control of GaSbAs alloys-Reference-Cited by-同舟云学术

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Composition control of GaSbAs alloys

Published:1999-05 Issue: Volume:201-202 Page:858-860
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bosacchi A,Franchi S,Allegri P,Avanzini V,Baraldi A,Magnanini R,Berti M,De Salvador D,Sinha S.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. The physics and technology of gallium antimonide: An emerging optoelectronic material

2. Study of GaAs MBE growth under Ga-rich conditions by RHEED intensity oscillations

3. Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport

4. Automated growth of AlxGa1−xAs and InxGa1−xAs by molecular beam epitaxy using an ion gauge flux monitor

5. Study of molecular-beam epitaxy GaAs1−xSbx (x<0.76) grown on GaAs(100)

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1. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states;Solar Energy Materials and Solar Cells;2019-09

2. Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications;Applied Surface Science;2018-06

3. Incorporation of Sb and As in MBE grown GaAsxSb1−x layers;APL Materials;2017-03

4. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate;Semiconductors;2016-05

5. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016

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