Study of molecular-beam epitaxy GaAs1−xSbx (x<0.76) grown on GaAs(100)-Reference-Cited by-同舟云学术

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Study of molecular-beam epitaxy GaAs1−xSbx (x<0.76) grown on GaAs(100)

Published:1988-03 Issue:2 Volume:6 Page:627
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Zhao J. H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Sb composition on the conduction type and photoluminescence of heavily Sn-doped GaAs1–xSbx;physica status solidi (c);2006-09

2. Special features of Sb2 and Sb4 incorporation in MBE-grown AlGaAsSb alloys;Semiconductors;2004-03

3. Growth and characterization of Sn-doped GaAsSb and GaAs epilayers on GaAs (001);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

4. Silicon carbide and silicon carbide-based structures;Surface Science Reports;2002-11

5. Response surface modeling of the composition of AlAsySb1−y alloys grown by molecular beam epitaxy;Journal of Crystal Growth;2001-05

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