Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substrates
2. Dislocation reduction in HgCdTe on GaAs by thermal annealing
3. Electrical doping of HgCdTe by ion implantation and heat treatment
4. Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy
5. J.S. Chen, U.S. Patent No. 4 897 152.
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