Optical Er-doping of Si during sublimational molecular beam epitaxy-Reference-Cited by-同舟云学术

Optical Er-doping of Si during sublimational molecular beam epitaxy

Published:1999-05 Issue: Volume:201-202 Page:534-537
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Andreev B.A,Andreev A.Yu,Ellmer H,Hutter H,Krasil'nik Z.F,Kuznetsov V.P,Lanzerstorfer S,Palmetshofer L,Piplits K,Rubtsova R.A,Sokolov N.S,Shmagin V.B,Stepikhova M.V,Uskova E.A

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy

2. Incorporation and optical activation of erbium in silicon using molecular beam epitaxy

3. Heavily doped Si layers grown by molecular beam epitaxy in vacuum

4. Optically active erbium centers in silicon

5. On the environment of optically active Er in Si-electroluminescence devices

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