Molecular beam epitaxial growth of GaAs1−XNX with dispersive nitrogen source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy
2. GaAsSbN: a new low-bandgap material for GaAs substrates
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition
5. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
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1. Annihilation of arsenic-nitrogen bonding defects in annealed InAs1−xNx quantum dots grown through nitrogen background pressure–controlled SS-MBE;Journal of Alloys and Compounds;2017-10
2. Defect annihilation-mediated enhanced activation energy of GaAs 0.979 N 0.021 -capped InAs/GaAs quantum dots by H − ion implantation;Thin Solid Films;2017-10
3. Impact of rapid thermal annealing on dilute nitride (GaAsN)-capped InAs/GaAs quantum dots exhibiting optical emission beyond ~1.5 μm;SPIE Proceedings;2016-09-16
4. MBE growth of sharp interfaces in dilute-nitride quantum wells with improved nitrogen-plasma design;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-05
5. Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2007-04
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