High temperature nucleation and growth of GaN crystals from the vapor phase
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
2. Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
3. Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
4. Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of Gan Films Via the Technique of Pendeo-Epitaxy
5. Present status of InGaN/GaN/AlGaN-based laser diodes
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