An empirical potential approach to structural stability of GaNxAs1−x
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Electronic structure and phase stability ofGaAs1−xNxalloys
3. The growth and properties of group III nitrides
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
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2. Effect of lattice constraint on structural stability and miscibility of (Al x Ga1−x )2O3 films: a first-principles study;Japanese Journal of Applied Physics;2023-01-23
3. Effect of Film Thickness on Structural Stability for BAlN and BGaN Alloys: Bond‐Order Interatomic Potential Calculations;physica status solidi (b);2020-04-28
4. Systematic Theoretical Investigations for Atomic Arrangements of GaNxAs1-x Nanowires Surrounded by Semiconductor Templates;e-Journal of Surface Science and Nanotechnology;2014
5. Systematic Theoretical Investigations for Miscibility of GaNxAs1-x-yBiy Thin Films;e-Journal of Surface Science and Nanotechnology;2014
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