Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(1 1 1)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Thermal stability of GaN on (111) Si substrate
2. Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy
3. Microstructure of AlN on Si (111) grown by plasma‐assisted molecular beam epitaxy
4. Porous silicon as an intermediate buffer layer for GaN growth on (100) Si
5. Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method
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3. AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing;RSC Advances;2019
4. High-Performance GaN-Based LEDs on Si Substrates: The Utility of Ex Situ Low-Temperature AlN Template With Optimal Thickness;IEEE Transactions on Electron Devices;2017-11
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